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arXiv · 1007.0909

Anholonomic spin manipulation in drift transport in semiconductors

B. J. Moehlmann·Michael E. Flatté
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Abstract

We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zincblende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (<100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits.

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B. J. Moehlmann, Michael E. Flatté. 2010-07-06. Anholonomic spin manipulation in drift transport in semiconductors. https://arxiv.org/abs/1007.0909

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