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arXiv · 1007.3238

Reversible modifications of linear dispersion - graphene between boron nitride monolayers

J. Slawinska·I. Zasada·P. Kosinski·Z. Klusek
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Abstract

Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using the first-principles calculations and the minimal tight-binding model. It is shown that for the ABC-stacked structure in the absence of external field the bands are linear in the vicinity of the Dirac points as in the case of single-layer graphene. For certain atomic configuration, the electric field effect allows opening of a band gap of over 230 meV. We believe that this mechanism of energy gap tuning could significantly improve the characteristics of graphene-based field-effect transistors and pave the way for future electronic applications.

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J. Slawinska, I. Zasada, P. Kosinski, Z. Klusek. 2010-11-09. Reversible modifications of linear dispersion - graphene between boron nitride monolayers. https://doi.org/10.1103/physrevb.82.085431

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