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arXiv · 1007.3941

Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions

D. Herranz·F. Bonell·A. Gomez-Ibarlucea·S. Andrieu·F. Montaigne·R. Villar1·C. Tiusan·F. G. Aliev
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Abstract

Alloying Fe electrodes with V, through reduced FeV/MgO interface mismatch in epitaxial magnetic tunnel junctions with MgO barriers, notably suppresses both nonmagnetic (parallel) and magnetic (antiparallel) state 1/f noise and enhances tunnelling magnetoresistance (TMR). A comparative study of the room temperature electron transport and low frequency noise in Fe1-xVx/MgO/Fe and Fe/MgO/Fe1-xVx MTJs with 0 <= x <= 0.25 reveals that V doping of the bottom electrode for x < 0.1 reduces in nearly 2 orders of magnitude the normalized nonmagnetic and magnetic 1/f noise. We attribute the enhanced TMR and suppressed 1/f noise to strongly reduced misfit and dislocation density.

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D. Herranz, F. Bonell, A. Gomez-Ibarlucea, S. Andrieu, F. Montaigne, R. Villar1, C. Tiusan, F. G. Aliev. 2010-07-22. Strongly suppressed 1/f noise and enhanced magnetoresistance in epitaxial Fe-V/MgO/Fe magnetic tunnel junctions. https://doi.org/10.1063/1.3430064

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