Stimulated emission of terahertz radiation by semiconductor microcavities

K. V. Kavokin; M. A. Kaliteevski; R. A. Abram; A. V. Kavokin; S. Sharkova; I. A. Shelykh

doi:10.1063/1.3519978

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arXiv · 1009.0642

Stimulated emission of terahertz radiation by semiconductor microcavities

K. V. Kavokin·M. A. Kaliteevski·R. A. Abram·A. V. Kavokin·S. Sharkova·I. A. Shelykh

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Abstract

We show that planar semiconductor microcavities in the strong coupling regime can be used as sources of stimulated terahertz (THz) radiation. Emitted THz photons would have a frequency of the spliting of the cavity polariton modes. The optical transition between upper and lower polariton branches is allowed due to mixing of the upper polariton state with one of excited exciton states. This transition is stimulated in the polariton laser regime.

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K. V. Kavokin, M. A. Kaliteevski, R. A. Abram, A. V. Kavokin, S. Sharkova, I. A. Shelykh. 2010-09-03. Stimulated emission of terahertz radiation by semiconductor microcavities. https://doi.org/10.1063/1.3519978

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