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arXiv · 1009.1893

Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

Cheng Cen·Daniela F. Bogorin·Jeremy Levy
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Abstract

The interface between polar LaAlO3 and non-polar SrTiO3 exhibits a remarkable variety of electronic behavior associated with the formation of an interfacial quasi-two-dimensional electron gas (q-2DEG). By "sketching" patterns of charge on the top LaAlO3 surface, the LaAlO3/SrTiO3 interface conductance can be controlled with near-atomic spatial resolution. Using this technique, a sketch-based oxide nanotransistor (SketchFET) was demonstrated with a minimum feature size of just two nanometers. Here we report direct measurements of the potential barriers and electronic coupling between nanowire segments within a SketchFET device. Near room temperature, switching is governed by thermally activated field emission from the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

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Cheng Cen, Daniela F. Bogorin, Jeremy Levy. 2010-09-09. Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor. https://doi.org/10.1088/0957-4484%2F21%2F47%2F475201

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