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arXiv · 1009.3367

Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate

Alexandre Pachoud·Manu Jaiswal·Priscilla Kailian Ang·Kian Ping Loh·Barbaros Oezyilmaz
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Abstract

We report the study of graphene devices in Hall-bar geometry, gated with a polymer electrolyte. High densities of 6 $\times 10^{13}/cm^{2}$ are consistently reached, significantly higher than with conventional back-gating. The mobility follows an inverse dependence on density, which can be correlated to a dominant scattering from weak scatterers. Furthermore, our measurements show a Bloch-Grüneisen regime until 100 K (at 6.2 $\times10^{13}/cm^{2}$), consistent with an increase of the density. Ubiquitous in our experiments is a small upturn in resistivity around 3 $\times10^{13}/cm^{2}$, whose origin is discussed. We identify two potential causes for the upturn: the renormalization of Fermi velocity and an electrochemically-enhanced scattering rate.

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Alexandre Pachoud, Manu Jaiswal, Priscilla Kailian Ang, Kian Ping Loh, Barbaros Oezyilmaz. 2010-10-29. Graphene Transport at High Carrier Densities using a Polymer Electrolyte Gate. https://doi.org/10.1209/0295-5075%2F92%2F27001

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