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arXiv · 1009.4624

Reverse Schottky-Asymmetry Spin Current Detectors

Yuan Lu·Ian Appelbaum
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Abstract

By reversing the Schottky barrier-height asymmetry in hot-electron semiconductor-metal-semiconductor ballistic spin filtering spin detectors, we have achieved: 1. Demonstration of >50% spin polarization in silicon, resulting from elimination of the ferromagnet/silicon interface on the transport channel detector contact, and 2. Evidence of spin transport at temperatures as high as 260K, enabled by an increase of detector Schottky barrier height.

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Yuan Lu, Ian Appelbaum. 2010-09-30. Reverse Schottky-Asymmetry Spin Current Detectors. https://doi.org/10.1063/1.3504659

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