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arXiv · 1009.6210

Controllable patterning and CVD growth of isolated carbon nanotubes with direct parallel writing of catalyst using Dip Pen Nanolithography

Irma Kuljanishvili·Dmitriy A. Dikin·Sergey Rozhok·Scott Mayle·Venkat Chandrasekhar
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Abstract

We report a process to fabricate carbon nanotubes (CNT) by chemical vapor deposition at predetermined location. This process was enabled by patterning catalyst nanoparticles directly on silicon substrates with nanometer-scale precision using Dip Pen Nanolithography(R) (DPN(R)). A multi-pen writing method was employed to increase the patterning rate. The development of new molecular inks for the deposition of the precursor catalyst resulted in a high yield of isolated carbon nanotubes, ideal for subsequent device fabrication. Here, we demonstrate the advantages of the new method for producing high quality isolated CNT in scalable array geometries.

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Irma Kuljanishvili, Dmitriy A. Dikin, Sergey Rozhok, Scott Mayle, Venkat Chandrasekhar. 2010-09-30. Controllable patterning and CVD growth of isolated carbon nanotubes with direct parallel writing of catalyst using Dip Pen Nanolithography. https://arxiv.org/abs/1009.6210

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