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arXiv · 1010.1232

A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity

N. Clement·K. Nishiguchi·J. F. Dufreche·D. Guerin·A. Fujiwara·D. Vuillaume
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Abstract

We investigate the mechanisms responsible for the low-frequency noise in liquid-gated nano-scale silicon nanowire field-effect transistors (SiNW-FETs) and show that the charge-noise level is lower than elementary charge. Our measurements also show that ionic strength of the surrounding electrolyte has a minimal effect on the overall noise. Dielectric polarization noise seems to be at the origin of the 1/f noise in our devices. The estimated spectral density of charge noise Sq = 1.6x10-2 e/sqr(Hz) at 10 Hz opens the door to metrological studies with these SiNW-FETs for the electrical detection of a small number of molecules.

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N. Clement, K. Nishiguchi, J. F. Dufreche, D. Guerin, A. Fujiwara, D. Vuillaume. 2010-10-19. A Silicon Nanowire Ion-Sensitive Field-Effect-Transistor with elementary charge sensitivity. https://doi.org/10.1063/1.3535958

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