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arXiv · 1010.1616

Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Carbon Nanotubes

Misun Cha·Seungwon Jung·Moon-Hyun Cha·Gunn Kim·Jisoon Ihm·Junghoon Lee
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Abstract

A field effect transistor (FET) measurement of a SWNT shows a transition from a metallic one to a p-type semiconductor after helical wrapping of DNA. Water is found to be critical to activate this metal-semiconductor transition in the SWNT-ssDNA hybrid. Raman spectroscopy confirms the same change in electrical behavior. According to our ab initio calculations, a band gap can open up in a metallic SWNT with wrapped ssDNA in the presence of water molecules due to charge transfer.

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Misun Cha, Seungwon Jung, Moon-Hyun Cha, Gunn Kim, Jisoon Ihm, Junghoon Lee. 2010-10-08. Reversible Metal-Semiconductor Transition of ssDNA-Decorated Single-Walled Carbon Nanotubes. https://doi.org/10.1021/nl8029948

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