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arXiv · 1010.4080

Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC

B. K. Daas·K. M. Daniels·T. S. Sudarshan·M. V. S. Chandrashekhar
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Abstract

We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thickness, N, in monolayers (ML), momentum scattering time, Fermi level position of graphene and estimate carrier mobility. By showing that 1/root(ns), the carrier concentration/ML, we argue that scattering is dominated by short-range interactions at the SiC/graphene interface. Polariton formation finds application in near-field optical devices such as superlenses.

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B. K. Daas, K. M. Daniels, T. S. Sudarshan, M. V. S. Chandrashekhar. 2010-10-20. Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC. https://arxiv.org/abs/1010.4080

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