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arXiv · 1010.5656

Molecular dynamics simulations of oxide memory resistors (memristors)

S. E. Savel'ev·A. S. Alexandrov·A. M. Bratkovsky·R. Stanley Williams
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Abstract

Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead to density fluctuations and short-range ordering, while illustrating some aspects of observed experimental behavior, such as memristor polarity inversion.

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S. E. Savel'ev, A. S. Alexandrov, A. M. Bratkovsky, R. Stanley Williams. 2010-10-27. Molecular dynamics simulations of oxide memory resistors (memristors). https://doi.org/10.1088/0957-4484%2F22%2F25%2F254011

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