Giant Stark effect in the emission of single semiconductor quantum dots

Anthony. J. Bennett; Raj. B. Patel; Joanna Skiba-Szymanska; Christine A. Nicoll; Ian Farrer; David A. Ritchie; Andrew J. Shields

doi:10.1063/1.3460912

arXiv · 1011.2436

Giant Stark effect in the emission of single semiconductor quantum dots

Anthony. J. Bennett·Raj. B. Patel·Joanna Skiba-Szymanska·Christine A. Nicoll·Ian Farrer·David A. Ritchie·Andrew J. Shields

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Abstract

We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission from a dot at electric fields of -500 kV/cm, leading to Stark shifts of up to 25 meV. Our results suggest this technique may enable future applications that require self-assembled dots with transitions at the same energy.

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Anthony. J. Bennett, Raj. B. Patel, Joanna Skiba-Szymanska, Christine A. Nicoll, Ian Farrer, David A. Ritchie, Andrew J. Shields. 2010-11-10. Giant Stark effect in the emission of single semiconductor quantum dots. https://doi.org/10.1063/1.3460912

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