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arXiv · 1011.4412

A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells

Yu Ye·Lin Gan·Lun Dai·Yu Dai·Xuefeng Guo·Hu Meng·Bin Yu·Zujin Shi·Guogang Qin
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Abstract

We develop a simple and scalable graphene patterning method using electron-beam or ultraviolet lithography followed by a lift-off process. This method, with the merits of: high pattern resolution and high alignment accuracy, free from additional etching or harsh process, universal to arbitrary substrates, compatible to Si microelectronic technology, can be easily applied to diverse graphene-based devices, especially in array-based applications, where large-scale graphene patterns are desired. We have applied this method to fabricate CdSe nanobelt (NB)/graphene Schottky junction solar cells, which have potential application in integrated nano-optoelectronic systems. Typical as-fabricated solar cell shows excellent photovoltaic behavior with an open-circuit voltage of ~ 0.51 V, a short-circuit current density of ~ 5.75 mA/cm2, and an energy conversion efficiency of ~1.25%. We attribute the high performance of the cell to the as-patterned high-performance graphene, which can form an ideal Schottky contact with CdSe NB. Our results suggest both the developed graphene patterning method and the as-fabricated CdSe nanobelt (NB)/graphene Schottky junction solar cells have reachable application prospect.

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Yu Ye, Lin Gan, Lun Dai, Yu Dai, Xuefeng Guo, Hu Meng, Bin Yu, Zujin Shi, Guogang Qin. 2010-11-19. A Simple and Scalable Graphene Patterning Method and Its Application in CdSe Nanobelt/Graphene Schottky Junction Solar Cells. https://doi.org/10.1039/c0nr00999g

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