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arXiv · 1012.3421

Giant Tunneling Electroresistance Effect Driven by an Electrically Controlled Spin Valve at a Complex Oxide Interface

J. D. Burton·E. Y. Tsymbal
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Abstract

A giant tunneling electroresistance effect may be achieved in a ferroelectric tunnel junction by exploiting the magnetoelectric effect at the interface between a ferroelectric barrier and magnetic La1-xSrxMnO3 electrode. Using first-principles density functional theory we demonstrate that a few magnetic monolayers of La1-xSrxMnO3 near the interface act, in response to ferroelectric polarization reversal, as an atomic scale spin-valve by filtering spin-dependent current. This effect produces more than an order of magnitude change in conductance, and thus constitutes a giant resistive switching effect.

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J. D. Burton, E. Y. Tsymbal. 2011-04-01. Giant Tunneling Electroresistance Effect Driven by an Electrically Controlled Spin Valve at a Complex Oxide Interface. https://doi.org/10.1103/physrevlett.106.157203

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