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arXiv · 1101.1347

Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics

Yi Zheng·Guang-Xin Ni·Sukang Bae·Chun-Xiao Cong·Orhan Kahya·Chee-Tat Toh·Hye Ri Kim·Danho Im·Ting Yu·Jong Hyun Ahn·Byung Hee Hong·Barbaros Ozyilmaz
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Abstract

Preparing graphene and its derivatives on functional substrates may open enormous opportunities for exploring the intrinsic electronic properties and new functionalities of graphene. However, efforts in replacing SiO$_{2}$ have been greatly hampered by a very low sample yield of the exfoliation and related transferring methods. Here, we report a new route in exploring new graphene physics and functionalities by transferring large-scale chemical vapor deposition single-layer and bilayer graphene to functional substrates. Using ferroelectric Pb(Zr$_{0.3}$Ti$_{0.7}$)O$_{3}$ (PZT), we demonstrate ultra-low voltage operation of graphene field effect transistors within $\pm1$ V with maximum doping exceeding $10^{13}\,\mathrm{cm^{-2}}$ and on-off ratios larger than 10 times. After polarizing PZT, switching of graphene field effect transistors are characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics.

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Yi Zheng, Guang-Xin Ni, Sukang Bae, Chun-Xiao Cong, Orhan Kahya, Chee-Tat Toh, Hye Ri Kim, Danho Im, Ting Yu, Jong Hyun Ahn, Byung Hee Hong, Barbaros Ozyilmaz. 2011-01-07. Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics. https://doi.org/10.1209/0295-5075%2F93%2F17002

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