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arXiv · 1101.1949

Effect of Chemical Doping on the Thermoelectric Properties of FeGa3

N. Haldolaarachchige·A. B. Karki·W. Adam Phelan·Y. M. Xiong·R. Jin·Julia Y. Chan·S. Stadler·D. P. Young
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Abstract

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and, a large n-type Seebeck coefficient (S ~ -400 μV/K) at room temperature. Hall effect measurements indicate that chemical doping significantly increases the carrier density, resulting in a metallic state, while the Seebeck coefficient still remains fairly large (~ -150 μV/K). The largest power factor (S2/ρ = 62 μW/m K2) and corresponding figure of merit (ZT = 0.013) at 390 K were observed for Fe0.99Co0.01(Ga0.997Ge0.003)3.

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N. Haldolaarachchige, A. B. Karki, W. Adam Phelan, Y. M. Xiong, R. Jin, Julia Y. Chan, S. Stadler, D. P. Young. 2011-03-15. Effect of Chemical Doping on the Thermoelectric Properties of FeGa3. https://doi.org/10.1063/1.3585843

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