Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity

Fei Chen; A. J. Sirois; R. W. Simmonds; A. J. Rimberg

doi:10.1063/1.3573824

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arXiv · 1101.4218

Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity

Fei Chen·A. J. Sirois·R. W. Simmonds·A. J. Rimberg

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Abstract

We report a technique for applying a dc voltage or current bias to the center conductor of a high-quality factor superconducting microwave cavity without significantly disturbing selected cavity modes. This is accomplished by incorporating dc bias lines into the cavity at specific locations. The measured S-matrix parameters of the system are in good agreement with theoretical predictions and simulations. We find that at 4 K the quality factor of the cavity degrades by less than 1% under the application of a dc bias.

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Fei Chen, A. J. Sirois, R. W. Simmonds, A. J. Rimberg. 2011-01-21. Introduction of a DC Bias into a High-Q Superconducting Microwave Cavity. https://doi.org/10.1063/1.3573824

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