Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior

Jean-Sebastian Tempel; Franziska Veit; Marc Aßmann; Lars Erik Kreilkamp; Arash Rahimi-Iman; Andreas Löffler; Sven Höfling; Stephan Reitzenstein; Lukas Worschech; Alfred Forchel; Manfred Bayer

arXiv · 1101.5316

Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior

Jean-Sebastian Tempel·Franziska Veit·Marc Aßmann·Lars Erik Kreilkamp·Arash Rahimi-Iman·Andreas Löffler·Sven Höfling·Stephan Reitzenstein·Lukas Worschech·Alfred Forchel·Manfred Bayer

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Abstract

We compare polariton lasing with photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the bare exciton mode. For the emission from the lower energy-momentum dispersion branch we find a two-threshold behavior of the ground state in the input-output curve where each transition is accompanied by characteristic changes of the in-plane mode dispersion. In particular, we show that the thresholds are unambiguously evidenced in the photon statistics of the emission based on the second-order correlation function. Moreover, the distinct two-threshold behavior is confirmed in the evolution of the emission pulse duration.

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Jean-Sebastian Tempel, Franziska Veit, Marc Aßmann, Lars Erik Kreilkamp, Arash Rahimi-Iman, Andreas Löffler, Sven Höfling, Stephan Reitzenstein, Lukas Worschech, Alfred Forchel, Manfred Bayer. 2011-01-27. Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior. https://arxiv.org/abs/1101.5316

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