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arXiv · 1102.2306

Determination of the bandgap and split-off band of wurtzite GaAs

Bernt Ketterer·Martin Heiss·Marie J. Livrozet·Elisabeth Reiger·Anna Fontcuberta i Morral
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Abstract

GaAs nanowires with a 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-field split-off band of hexagonal wurtzite GaAs. The temperature dependence of this transition enables us to extract the value at 0 K, which is 1.982 eV. Our photoluminescence excitation spectroscopy measurements are consistent with a band gap of GaAs wurtzite below 1.523 eV.

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Bernt Ketterer, Martin Heiss, Marie J. Livrozet, Elisabeth Reiger, Anna Fontcuberta i Morral. 2011-02-11. Determination of the bandgap and split-off band of wurtzite GaAs. https://doi.org/10.1103/physrevb.83.125307

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