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arXiv · 1102.4627

Mechanically-Induced Transport Switching Effect in Graphene-based Nanojunctions

T. Kawai·M. Poetschke·Y. Miyamoto·C. G. Rocha·S. Roche·G. Cuniberti
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Abstract

We report a theoretical study suggesting a novel type of electronic switching effect, driven by the geometrical reconstruction of nanoscale graphene-based junctions. We considered junction struc- tures which have alternative metastable configurations transformed by rotations of local carbon dimers. The use of external mechanical strain allows a control of the energy barrier heights of the potential profiles and also changes the reaction character from endothermic to exothermic or vice-versa. The reshaping of the atomic details of the junction encode binary electronic ON or OFF states, with ON/OFF transmission ratio that can reach up to 10^4-10^5. Our results suggest the possibility to design modern logical switching devices or mechanophore sensors, monitored by mechanical strain and structural rearrangements.

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T. Kawai, M. Poetschke, Y. Miyamoto, C. G. Rocha, S. Roche, G. Cuniberti. 2011-02-24. Mechanically-Induced Transport Switching Effect in Graphene-based Nanojunctions. https://doi.org/10.1103/physrevb.83.241405

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