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arXiv · 1103.3561

Incommensurate Antiferromagnetic Insulating State in (MDT-TS)(AuI$_2$)$_{x}$

Hideo Yoshioka·Hitoshi Seo·Yuichi Otsuka
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Abstract

We theoretically study the metal-insulator transition in a molecular conductor (MDT-TS)(AuI$_2$)$_{x}$ composed with an incommensurate ratio ($x = 0.441$), where the conduction band originated from the HOMO of donor MDT-TS molecules is incommensurately filled. We consider a two-dimensional Hubbard model taking account of anisotropic transfer integrals in the donor layer, under a periodic potential due to the anions (AuI$_2$)$^-$ which mismatches the donor lattice period, and investigate the ground state within mean-field approximation. An antiferromagnetic insulating state with induced charge disproportionation is obtained in the large $U$ region; this corresponds to the incommensurate Mott insulating state predicted previously [H. Yoshioka {\it et al.}: \jo{\JPSJ}{74}{2005}{1922}] based on a simplified one-dimensional model.

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Hideo Yoshioka, Hitoshi Seo, Yuichi Otsuka. 2011-03-18. Incommensurate Antiferromagnetic Insulating State in (MDT-TS)(AuI$_2$)$_{x}$. https://doi.org/10.1143/jpsj.80.123702

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