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arXiv · 1103.5891

Single-electron shuttle based on a silicon quantum dot

K. W. Chan·M. Mottonen·A. Kemppinen·N. S. Lai·K. Y. Tan·W. H. Lim·A. S. Dzurak
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Abstract

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/SiO_2 interface below an aluminum top gate with two additional barrier gates used to deplete the electron gas locally and to define a quantum dot. Directional single-electron shuttling from the source and to the drain lead is achieved by applying a dc source-drain bias while driving the barrier gates with an ac voltage of frequency f_p. Current plateaus at integer levels of ef_p are observed up to f_p = 240 MHz operation frequencies. The observed results are explained by a sequential tunneling model which suggests that the electron gas may be heated substantially by the ac driving voltage.

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K. W. Chan, M. Mottonen, A. Kemppinen, N. S. Lai, K. Y. Tan, W. H. Lim, A. S. Dzurak. 2011-10-05. Single-electron shuttle based on a silicon quantum dot. https://doi.org/10.1063/1.3593491

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