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arXiv · 1103.5928

The efficient spin injector scheme based on Heusler materials

Stanislav Chadov·Tanja Graf·Kristina Chadova·Xuefang Dai·Frederick Casper·Gerhard H. Fecher·Claudia Felser
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Abstract

We present the rational design scheme intended to provide the stable high spin-polarization at the interfaces of the magneto-resistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principal calculations verify that interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediate between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.

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Stanislav Chadov, Tanja Graf, Kristina Chadova, Xuefang Dai, Frederick Casper, Gerhard H. Fecher, Claudia Felser. 2011-03-30. The efficient spin injector scheme based on Heusler materials. https://doi.org/10.1103/physrevlett.107.047202

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