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arXiv · 1103.6051

Atomistic Simulations of Flash Memory Materials Based on Chalcogenide Glasses

Bin Cai·Binay Prasai·D. A. Drabold
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Abstract

In this chapter, by using ab-initio molecular dynamics, we introduce the latest simulation results on two materials for flash memory devices: Ge2Sb2Te5 and Ge-Se-Cu-Ag. This chapter is a review of our previous work including some of our published figures and text in Cai et al. (2010) and Prasai & Drabold (2011) and also includes several new results.

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Bin Cai, Binay Prasai, D. A. Drabold. 2011-03-30. Atomistic Simulations of Flash Memory Materials Based on Chalcogenide Glasses. https://arxiv.org/abs/1103.6051

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