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arXiv · 1104.0212

Physical properties of highly uniform InGaAs pyramidal quantum dots with GaAs barriers: Fine structure splitting in pre-patterned substrates

L. O. Mereni·V. Dimastrodonatoa·G. Juskaa·E. Pelucchia L. O. Mereni·E. Pelucchi
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Abstract

InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 μm edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study on the fine structure splitting (FSS). The investigation of about 40 single quantum dots revealed two main points: (1) the values of this parameter are very similar from dot to dot, proving again the uniformity of Pyramidal QD properties, (2) there is a little chance, in the sample investigated, to find a dot with natural zero splitting, but the values found (the mean being 13 μeV) should always guarantee the capability of restoring the degeneracy with some corrective technique (e.g. application of a small magnetic field).

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L. O. Mereni, V. Dimastrodonatoa, G. Juskaa, E. Pelucchia L. O. Mereni, E. Pelucchi. 2011-04-01. Physical properties of highly uniform InGaAs pyramidal quantum dots with GaAs barriers: Fine structure splitting in pre-patterned substrates. https://doi.org/10.1016/j.spmi.2010.06.011

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