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arXiv · 1104.4834

Degenerate versus semi-degenerate transport in a correlated 2D hole system

Richard L. J. Qiu·Xuan P. A. Gao·Loren N. Pfeiffer·Ken W. West
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Abstract

It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a characteristic temperature comparable with the Fermi temperature ($T_F$). We find that the metallic 2D hole system (2DHS) in GaAs quantum well (QW) has a linear density ($p$) dependent conductivity, $σ\approx eμ^*(p-p_0)$, in both the degenerate (T< T_F$) is originated from the reduced $p_0$, the density of immobile carriers in a two-phase picture.

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Richard L. J. Qiu, Xuan P. A. Gao, Loren N. Pfeiffer, Ken W. West. 2011-04-26. Degenerate versus semi-degenerate transport in a correlated 2D hole system. https://doi.org/10.1103/physrevb.83.193301

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