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arXiv · 1105.1001

Raman spectroscopy on etched graphene nanoribbons

Dominik Bischoff·Johannes Güttinger·Susanne Dröscher·Thomas Ihn·Klaus Ensslin·Christoph Stampfer
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Abstract

We investigate etched single-layer graphene nanoribbons with different widths ranging from 30 to 130 nm by confocal Raman spectroscopy. We show that the D-line intensity only depends on the edge-region of the nanoribbon and that consequently the fabrication process does not introduce bulk defects. In contrast, the G- and the 2D-lines scale linearly with the irradiated area and therefore with the width of the ribbons. We further give indications that the D- to G-line ratio can be used to gain information about the crystallographic orientation of the underlying graphene. Finally, we perform polarization angle dependent measurements to analyze the nanoribbon edge-regions.

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Dominik Bischoff, Johannes Güttinger, Susanne Dröscher, Thomas Ihn, Klaus Ensslin, Christoph Stampfer. 2011-05-05. Raman spectroscopy on etched graphene nanoribbons. https://doi.org/10.1063/1.3561838

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