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arXiv · 1105.3131

Voltage controlled terahertz transmission through GaN quantum wells

T. Laurent·R. Sharma·J. Torres·P. Nouvel·S. Blin·L. Varani·Y. Cordier·M. Chmielowska·S. Chenot·JP Faurie·B. Beaumont·P. Shiktorov·E. Starikov·V. Gruzinskis·V. Korotyevyev·V. Kochelap
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Abstract

We report measurements of radiation transmission in the 0.220--0.325 THz frequency domain through GaN quantum wells grown on sapphire substrates at room and low temperatures. A significant enhancement of the transmitted beam intensity with the applied voltage on the devices under test is found. For a deeper understanding of the physical phenomena involved, these results are compared with a phenomenological theory of light transmission under electric bias relating the transmission enhancement to changes in the differential mobility of the two-dimensional electron gas.

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T. Laurent, R. Sharma, J. Torres, P. Nouvel, S. Blin, L. Varani, Y. Cordier, M. Chmielowska, S. Chenot, JP Faurie, B. Beaumont, P. Shiktorov, E. Starikov, V. Gruzinskis, V. Korotyevyev, V. Kochelap. 2011-05-16. Voltage controlled terahertz transmission through GaN quantum wells. https://doi.org/10.1063/1.3627183

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