Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

N. M. R. Peres; J. M. B. Lopes dos Santos; A. H. Castro Neto

doi:10.1209/0295-5075/95/18001

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arXiv · 1105.5399

Coulomb Drag and High Resistivity Behavior in Double Layer Graphene

N. M. R. Peres·J. M. B. Lopes dos Santos·A. H. Castro Neto

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Abstract

We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on/off ratio for current flow by tunning the external gate voltage. Hence, although graphene remains semi-metallic, the double layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double layer graphene samples in disordered SiO2 substrates.

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N. M. R. Peres, J. M. B. Lopes dos Santos, A. H. Castro Neto. 2011-06-13. Coulomb Drag and High Resistivity Behavior in Double Layer Graphene. https://doi.org/10.1209/0295-5075%2F95%2F18001

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