Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$

V. O. Sokolov; V. G. Plotnichenko; E. M. Dianov

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arXiv · 1106.1519

Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$

V. O. Sokolov·V. G. Plotnichenko·E. M. Dianov

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Abstract

Subvalent bismuth centers (interstitial $Bi^{+}$ ion, Bi$_5^{3+}$ cluster ion, and Bi$_4^0$ cluster) are examined as possible centers of broadband near-IR luminescence in bismuth-doped solids on the grounds of quantum-chemical modeling and experimental data.

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V. O. Sokolov, V. G. Plotnichenko, E. M. Dianov. 2011-07-27. Possible centers of broadband near-IR luminescence in bismuth-doped solids: $Bi^{+}$, Bi$_5^{3+}$, and Bi$_4^0$. https://arxiv.org/abs/1106.1519

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