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arXiv · 1106.2951

Low-temperature photocarrier dynamics in monolayer MoS2

T. Korn·S. Heydrich·M. Hirmer·J. Schmutzler·C. Schüller
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Abstract

The band structure of MoS$_2$ strongly depends on the number of layers, and a transition from indirect to direct-gap semiconductor has been observed recently for a single layer of MoS$_2$. Single-layer MoS$_2$ therefore becomes an efficient emitter of photoluminescence even at room temperature. Here, we report on scanning Raman and on temperature-dependent, as well as time-resolved photoluminescence measurements on single-layer MoS$_2$ flakes prepared by exfoliation. We observe the emergence of two distinct photoluminescence peaks at low temperatures. The photocarrier recombination at low temperatures occurs on the few-picosecond timescale, but with increasing temperatures, a biexponential photoluminescence decay with a longer-lived component is observed.

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T. Korn, S. Heydrich, M. Hirmer, J. Schmutzler, C. Schüller. 2011-06-17. Low-temperature photocarrier dynamics in monolayer MoS2. https://doi.org/10.1063/1.3636402

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