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arXiv · 1106.3449

Momentum-Dependent Hybridization Gap and dispersive in-gap state of The Kondo Semiconductor SmB6

Hidetoshi Miyazaki·Tetsuya Hajiri·Takahiro Ito·Satoru Kunii·Shin-ichi Kimura
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Abstract

We report the temperature-dependent three-dimensional angle-resolved photoemission spectra of the Kondo semiconductor SmB$_6$. We found a difference in the temperature dependence of the peaks at the X and $\Gamma$ points, due to hybridization between the Sm 5d conduction band and the nearly localized Sm 4f state. The peak intensity at the X point has the same temperature dependence as the valence transition below 120 K, while that at the $\Gamma$ point is consistent with the magnetic excitation at Q=(0.5,0.5,0.5) below 30 K. This suggests that the hybridization with the valence transition mainly occurs at the X point, and the initial state of the magnetic excitation is located at the $\Gamma$ point.

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Hidetoshi Miyazaki, Tetsuya Hajiri, Takahiro Ito, Satoru Kunii, Shin-ichi Kimura. 2011-06-17. Momentum-Dependent Hybridization Gap and dispersive in-gap state of The Kondo Semiconductor SmB6. https://doi.org/10.1103/physrevb.86.075105

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