Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures

I. Stavarache

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arXiv · 1106.4419

Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures

I. Stavarache

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Abstract

Percolation phenomena are investigated and discussed in three kinds of nanostructures: first two are nanocrystalline silicon-based systems, Si nanodots embedded in amorphous SiO2 matrix and porous silicon formed by an oxidized nanowire network, and the third consisting of a multi-walled carbon nanotube network embedded in amorphous SiN. The current-voltage characteristics measured on first two systems present voltage percolation thresholds with the same shape - a saturation plateau region of the current, followed by an abrupt increase. The current-voltage and conductance-voltage curves measured on multi-walled carbon nanotube network embedded in amorphous SiN present non-periodic and temperature independent oscillations. These oscillations are interpreted as voltage percolation thresholds.

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I. Stavarache. 2011-06-22. Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures. https://arxiv.org/abs/1106.4419

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