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arXiv · 1106.5642

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

D. H. K. Murthy·T. Xu·W. H. Chen·J. Houtepen A.·T. J. Savenije·L. D. A. Siebbeles·J. P. Nys·Christophe Krzeminski·Bruno Grandidier·Didier Stiévenard·Philippe Pareige·F. Jomard·Gilles Patriache·O. I. Lebedev
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Abstract

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.

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D. H. K. Murthy, T. Xu, W. H. Chen, J. Houtepen A., T. J. Savenije, L. D. A. Siebbeles, J. P. Nys, Christophe Krzeminski, Bruno Grandidier, Didier Stiévenard, Philippe Pareige, F. Jomard, Gilles Patriache, O. I. Lebedev. 2011-06-28. Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient. https://doi.org/10.1088/0957-4484%2F22%2F31%2F315710

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