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arXiv · 1106.5811

Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC

David A. Siegel·Choongyu Hwang·Alexei V. Fedorov·Alessandra Lanzara
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Abstract

The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB- bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

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David A. Siegel, Choongyu Hwang, Alexei V. Fedorov, Alessandra Lanzara. 2011-06-28. Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC. https://doi.org/10.1103/physrevb.81.241417

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