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arXiv · 1107.4085

Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer

T. Kazimierczuk·A. Golnik·P. Kossacki·J. Gaj·Z. Wasilewski·A. Babinski
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Abstract

Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence lines with a low spatial density. We identify lines related to neutral exciton and biexciton as well as trions. Exciton emission antibunching (second order correlation value of g^2(0)=0.16) and biexciton-exciton emission cascade prove non-classical emission from the dots and confirm their potential as single photon sources.

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T. Kazimierczuk, A. Golnik, P. Kossacki, J. Gaj, Z. Wasilewski, A. Babinski. 2011-07-20. Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer. https://doi.org/10.1103/physrevb.84.115325

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