Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles

V. Ryzhii; M. Ryzhii; T. Otsuji

doi:10.1063/1.3656712

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arXiv · 1108.2077

Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles

V. Ryzhii·M. Ryzhii·T. Otsuji

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Abstract

We evaluate recombination of electrons and holes in optically pumped graphene associated with the interband tunneling between electron-hole puddles and calculate the recombination rate and time. It is demonstrated that this mechanism can be dominant in a wide range of pumping intensities. We show that the tunneling recombination rate and time are nonmonotonic functions of the quasi-Fermi energies of electrons and holes and optical pumping intensity. This can result in hysteresis phenomena.

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V. Ryzhii, M. Ryzhii, T. Otsuji. 2011-08-10. Tunneling Recombination in Optically Pumped Graphene with Electron-Hole Puddles. https://doi.org/10.1063/1.3656712

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