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arXiv · 1108.2627

Determination of the graphene growth mode on SiC(0001) and SiC(000-1)

J. B. Hannon·M. Copel·R. M. Tromp
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Abstract

We have determined the growth mode of graphene on SiC(0001) and SiC(000-1) using ultra-thin, isotopically-labeled Si13C `marker layers' grown epitaxially on the Si12C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si-face and C-face), we find that the 13C is located mainly in the outermost graphene layers, indicating that, during decomposition, new graphene layers form underneath existing ones.

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J. B. Hannon, M. Copel, R. M. Tromp. 2011-08-12. Determination of the graphene growth mode on SiC(0001) and SiC(000-1). https://arxiv.org/abs/1108.2627

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