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arXiv · 1108.3716

Non-volatile Complementary Resistive Switch-based Content Addressable Memory

Omid Kavehei·Said Al-Sarawi·Sharath Sriram·Madhu Bhaskaran·Kyoung-Rok Cho·Kamran Eshraghian·Derek Abbott
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Abstract

This paper presents a novel resistive-only Binary and Ternary Content Addressable Memory (B/TCAM) cell that consists of two Complementary Resistive Switches (CRSs). The operation of such a cell relies on a logic$\rightarrow$ON state transition that enables this novel CRS application.

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Omid Kavehei, Said Al-Sarawi, Sharath Sriram, Madhu Bhaskaran, Kyoung-Rok Cho, Kamran Eshraghian, Derek Abbott. 2011-08-18. Non-volatile Complementary Resistive Switch-based Content Addressable Memory. https://arxiv.org/abs/1108.3716

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