Lattice Vibrational Modes and their Frequency Shifts in Semiconductor Nanowires

Li Yang; M. Y. Chou

doi:10.1021/nl200523f

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arXiv · 1108.5510

Lattice Vibrational Modes and their Frequency Shifts in Semiconductor Nanowires

Li Yang·M. Y. Chou

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Abstract

We have performed first-principles calculations to study the lattice vibrational modes and their Raman activities in silicon nanowires (SiNWs). Two types of characteristic vibrational modes are examined: high-frequency optical modes and low-frequency confined modes. Their frequencies have opposite size dependence with a red shift for the optical modes and a blue shift for the confined modes as the diameter of SiNWs decreases. In addition, our calculations show that these vibrational modes can be detected by Raman scattering measurements, providing an efficient way to estimate the size of SiNWs.

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Li Yang, M. Y. Chou. 2011-08-28. Lattice Vibrational Modes and their Frequency Shifts in Semiconductor Nanowires. https://doi.org/10.1021/nl200523f

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