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arXiv · 1109.1311

An intrinsic mobility ceiling of Si bulk

Nuria Garcia-Castello·Joan Daniel Prades·Albert Cirera
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Abstract

We compute by Density Functional Theory-Non Equilibrium Green Functions Formalism (DFT-NEGFF) the conductance of bulk Si along different crystallographic directions. We find a ceiling value for the intrinsic mobility of bulk silicon of $8.4\cdot10^6 cm^2/V\cdot s$. We suggest that this result is related to the lowest effective mass of the $<001>$ direction.

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Nuria Garcia-Castello, Joan Daniel Prades, Albert Cirera. 2011-09-06. An intrinsic mobility ceiling of Si bulk. https://arxiv.org/abs/1109.1311

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