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arXiv · 1109.3431

A Dynamical Model of Harmonic Generation in Centrosymmetric Semiconductors

M. Scalora·M. A. Vincenti·D. de Ceglia·N. Akozbek·V. Roppo·M. J. Bloemer·J. W. Haus
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Abstract

We study second and third harmonic generation in centrosymmetric semiconductors at visible and UV wavelengths in bulk and cavity environments. Second harmonic generation is due to a combination of symmetry breaking, the magnetic portion of the Lorentz force, and quadrupolar contributions that impart peculiar features to the angular dependence of the generated signals, in analogy to what occurs in metals. The material is assumed to have a non-zero, third order nonlinearity that gives rise to most of the third harmonic signal. Using the parameters of bulk Silicon we predict that cavity environments can significantly modify second harmonic generation (390nm) with dramatic improvements for third harmonic generation (266nm). This occurs despite the fact that the harmonics may be tuned to a wavelength range where the dielectric function of the material is negative: a phase locking mechanism binds the pump to the generated signals and inhibits their absorption. These results point the way to novel uses and flexibility of materials like Silicon as nonlinear media in the visible and UV ranges.

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M. Scalora, M. A. Vincenti, D. de Ceglia, N. Akozbek, V. Roppo, M. J. Bloemer, J. W. Haus. 2011-09-15. A Dynamical Model of Harmonic Generation in Centrosymmetric Semiconductors. https://arxiv.org/abs/1109.3431

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