Spontaneous Emission and Ultrafast Carrier Relaxation in InGaN Quantum Well with Metal Nanoparticles

Meg Mahat; Arup Neogi

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arXiv · 1109.5252

Spontaneous Emission and Ultrafast Carrier Relaxation in InGaN Quantum Well with Metal Nanoparticles

Meg Mahat·Arup Neogi

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Abstract

Subpicosecond wavelength non-degenerate differential transmission (DT) was used to observe the carrier relaxation mechanism in GaN based quantum well (QW) with and without metal nanoparticles (MNPs) in it. The spontaneous emission dominates the stimulated emission for above the GaN band edge excitation energy. We observed long decay times for Au-embedded sample and short decay times for Ag-embedded sample with respect to reference sample.

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Meg Mahat, Arup Neogi. 2011-11-07. Spontaneous Emission and Ultrafast Carrier Relaxation in InGaN Quantum Well with Metal Nanoparticles. https://arxiv.org/abs/1109.5252

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