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arXiv · 1109.5498

Anomalous Hall effect in the Co-based Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl

I. -M. Imort·P. Thomas·G. Reiss·A. Thomas
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Abstract

The anomalous Hall effect (AHE) in the Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl is studied in dependence of the annealing temperature to achieve a general comprehension of its origin. We have demonstrated that the crystal quality affected by annealing processes is a significant control parameter to tune the electrical resistivity $ρ_{xx}$ as well as the anomalous Hall resistivity $ρ_{ahe}$. Analyzing the scaling behavior of $ρ_{ahe}$ in terms of $ρ_{xx}$ points to a temperature-dependent skew scattering as the dominant mechanism in both Heusler compounds.

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I. -M. Imort, P. Thomas, G. Reiss, A. Thomas. 2011-09-26. Anomalous Hall effect in the Co-based Heusler compounds Co$_{2}$FeSi and Co$_{2}$FeAl. https://doi.org/10.1063/1.3678323

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