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arXiv · 1109.6911

Impact of disorder on the 5/2 fractional quantum Hall state

W. Pan·N. Masuhara·N. S. Sullivan·K. W. Baldwin·K. W. West·L. N. Pfeiffer·D. C. Tsui
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Abstract

We compare the energy gap of the ν=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.

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W. Pan, N. Masuhara, N. S. Sullivan, K. W. Baldwin, K. W. West, L. N. Pfeiffer, D. C. Tsui. 2011-09-30. Impact of disorder on the 5/2 fractional quantum Hall state. https://doi.org/10.1103/physrevlett.106.206806

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