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arXiv · 1110.1123

Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor

Mitra Djamal·Ramli·Sparisoma Viridi·Khairurrijal
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Abstract

Giant magnetoresistance (GMR) material has great potential as next generation magnetic field sensing devices, have magnetic properties and high electrical potential to be developed into various applications such as: magnetic field sensor measurements, current measurements, linear and rotational position sensor, data storage, head recording, and non-volatile magnetic random access memory (MRAM). Today, the new GMR materials based on organic material obtained after allowing for Organic Magnetoresistance (OMAR) was found in OLEDs (organic light-emitting diodes). This organic material is used as a spacer layer in GMR devices with spin-valve structures. Traditionally, metals and semiconductors are used as a spacer layer in spin-valve. However, several factors such as spin scattering caused by large atoms of the spacer material and the interface scattering of ferromagnetic with a spacer, will limit the efficiency of spin-valve. In this paper, we describe a new GMR materials based on organic material that we have developed.

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Mitra Djamal, Ramli, Sparisoma Viridi, Khairurrijal. 2011-10-06. Giant Magnetoresistance Effect in Organic Material and Its Potential for Magnetic Sensor. https://doi.org/10.1109/icici-bme.2011.6108661

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