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arXiv · 1110.4923

Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors

Bing Huang·Qiang Xu·Su-Huai Wei
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Abstract

Using physical insights and advanced first-principles calculations, we suggest that corundum is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of {\guillemotright} 180 meV can be induced in graphene layer adsorbed on Al-terminated surface, which could realize large ON/OFF ratio and high carrier mobility in graphene transistors without additional band gap engineering and significant reduction of transport properties. Moreover, the band gaps of graphene/Al2O3 system could be tuned by an external electric field for practical applications.

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Bing Huang, Qiang Xu, Su-Huai Wei. 2011-10-21. Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors. https://doi.org/10.1103/physrevb.84.155406

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