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arXiv · 1110.5668

Joule-assisted silicidation for short-channel silicon nanowire devices

Massimo Mongillo·Panayotis Spathis·Georgios Katsaros·Pascal Gentile·Marc Sanquer·Silvano De Franceschi
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Abstract

We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.

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Massimo Mongillo, Panayotis Spathis, Georgios Katsaros, Pascal Gentile, Marc Sanquer, Silvano De Franceschi. 2011-10-25. Joule-assisted silicidation for short-channel silicon nanowire devices. https://doi.org/10.1021/nn202524j

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