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arXiv · 1110.6562

Interface Structure of Graphene on SiC(000-1)

N. Srivastava·Guowei He·Luxmi·R. M. Feenstra
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Abstract

Graphene films prepared by heating the SiC(000-1) surface (the C-face of the {0001} surfaces) in vacuum or in a Si-rich environment are compared. It is found that different interface structures occur for the two situations. The former yields a well known 3x3 reconstructed interface, whereas the latter produces an interface with rt(43)xrt(43)-R\pm7.6 degrees symmetry. This structure is shown to contain a graphene-like layer with properties similar to the 6rt(3)x6rt(3)-R30 degrees "buffer layer" that forms on the Si(0001) surface (the Si-face).

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N. Srivastava, Guowei He, Luxmi, R. M. Feenstra. 2011-10-29. Interface Structure of Graphene on SiC(000-1). https://doi.org/10.1103/physrevb.85.041404

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